PART |
Description |
Maker |
TLN107A E006145 |
INFRARED LED GaAS INFRARED EMITTER From old datasheet system INFRARED LED FOR PHOTO INTERRUTER
|
TOSHIBA[Toshiba Semiconductor]
|
SID1010CM SID1F10CM SID1K10CM SID1010CXM SID1G10CM |
Infrared LEDs Infrared LED(For Remote Control)(红外LED(用于远程控制)) 红外发光二极管(对于遥控器)(红外发光二极管(用于远程控制) Infrared LEDs 5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
SANKEN[Sanken electric] Sanken Electric Co., Ltd.
|
TLP908 TLP908LB |
POSITION, LINEAR SENSOR-DIFFUSE, 0.5-1.5mm, 0.50-0.75mA, RECTANGULAR, THROUGH HOLE MOUNT PHOTOREFLECTIVE SENSORS INFRARED LED PHOTO TRANSISTOR PHOTOREFLECTIVE传感器红外发光二极管光敏三极 PHOTOREFLECTIVE SENSORS INFRARED LED PHOTOTRANSISTOR
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
OP168F OP268FB OP268FPS OP268FA OP268FC OP269A OP2 |
Plastic Infrared Emitting Diode 0.76 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
TT electronics OPTEK Technology OPTEK TECHNOLOGY INC
|
F5D3 F5D1 F5D2 F5D1B |
AlGaAs INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
F5D3 F5D1 F5D2 |
AIGAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
QT[QT Optoelectronics]
|
TLN115A07 TLN115AF TLN115A |
Infrared LED GaAs Infrared Emitter
|
Toshiba Semiconductor
|
TLN105B07 TLN105BF |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Corporation Toshiba Semiconductor
|
L279106 |
Infrared LED Small emission spot LED using current confined chip
|
Hamamatsu Corporation
|
R878 R87810 L9337 |
High power LED for optical switches 4.2 mm, 1 ELEMENT, INFRARED LED, 870 nm
|
Hamamatsu Corporation
|